Stress Induced Performance Degradation in LC Oscillators

Enjun Xiao, Partha P. Ghosh

Abstract:	Stress induced performance degradation in CMOS LC oscillators are investigated systematically. Three architectures of LC oscillators are studied, including NMOS, PMOS, and complementary LC oscillators, for 0.16 µm CMOS technology. The 0.16 µm wafers are stressed, and the aged parameters are extracted. The aged parameters are used to study the stress induced parameter degradations of LC oscillators, including phase noise, amplitude, and the tuning range. After the comparison among the three LC oscillators, it is shown that the complementary LC oscillators are more reliable.
Published in:	Proceedings of the 37th Annual Precise Time and Time Interval Systems and Applications Meeting August 29 - 31, 2005 Vancouver, Canada
Pages:	559 - 561
Cite this article:	Xiao, Enjun, Ghosh, Partha P., "Stress Induced Performance Degradation in LC Oscillators," Proceedings of the 37th Annual Precise Time and Time Interval Systems and Applications Meeting, Vancouver, Canada, August 2005, pp. 559-561.
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