Low-Noise X-Band Oscillator and Amplifier Technologies: Comparison and Status

D. A. Howe, A. Hati

Abstract:	This study compares the phase noise of different classes of oscillators and amplifiers that work at X-band. Bestin-class results are presented based on recent measurements at NIST. In particular, comparisons are made between mature technologies of multiplied quartz, sapphire dielectric in whispering gallery mode (WGM), and air-dielectric-resonator stabilized RF oscillators in contrast to various configurations of optical electronic oscillators (OEO), cavity-stabilized, and atom-stabilized optical-domain oscillators and femtosecond-laser-comb frequency synthesizers. This study also reports the status of classes of low-noise X-band amplifiers, since high-spectral-purity oscillators are constrained by amplifiers to varying degrees. Best-available low-noise X-band commercial amplifiers are compared with new feedforward, feedback, and array-gain test devices. Straight HBT (heterojunction bipolar transistors) and SiGe HBT technologies are compared in terms of phase noise. Results are for an operating frequency of 10 GHz.
Published in:	Proceedings of the 37th Annual Precise Time and Time Interval Systems and Applications Meeting August 29 - 31, 2005 Vancouver, Canada
Pages:	481 - 487
Cite this article:	Howe, D. A., Hati, A., "Low-Noise X-Band Oscillator and Amplifier Technologies: Comparison and Status," Proceedings of the 37th Annual Precise Time and Time Interval Systems and Applications Meeting, Vancouver, Canada, August 2005, pp. 481-487.
Full Paper:	ION Members/Non-Members: 1 Download Credit Sign In