On the Power Dependence of Extraneous Microwave Fields in Atomic Frequency Standards

S.R. Jefferts, J.H. Shirley, N. Ashby, T.P. Heavner, E.A. Donley, F. Levi

Abstract:	We show that the frequency bias caused by distributed cavity phase has a strong dependence on microwave power. We also show that frequency biases associated with microwave leakage have distinct signatures in their dependence on microwave power and the physical location of the leakage interaction with the atom.
Published in:	Proceedings of the 37th Annual Precise Time and Time Interval Systems and Applications Meeting August 29 - 31, 2005 Vancouver, Canada
Pages:	105 - 110
Cite this article:	Jefferts, S.R., Shirley, J.H., Ashby, N., Heavner, T.P., Donley, E.A., Levi, F., "On the Power Dependence of Extraneous Microwave Fields in Atomic Frequency Standards," Proceedings of the 37th Annual Precise Time and Time Interval Systems and Applications Meeting, Vancouver, Canada, August 2005, pp. 105-110.
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